化学合成瓷料对ZnO压敏电阻的性能及微观结构影响  

Effect of Synthesized Varistor Powder on Microstructure and Properties of ZnO Varistors

作　　者：费自豪[1] 王志宏[1] 吴光劲 樊远鉴[1] 杨光棣 

机构地区：[1]贵州省冶金化工研究所,贵阳550002

出　　处：《材料科学与工艺》1998年第2期24-27,共4页Materials Science and Technology

摘　　要：用化学法掺杂合成的粉料制作成压敏电阻并作了电性能检测，发现其有高的电位梯度（290～500V／mm）;在进行8／20μs模拟雷电冲击时发现其单位体积可承受较大的冲击能量，并有较小的V1mA变化率;用电子探针观测了其微观结构，发现其有均匀细小的晶粒晶界结构.Measurements of electric properties of ZnO varistors made of powder prepared by chemical liquid precipitation method indicate V1mA/mm value of this varistor is high up to 290～500V/mm,and the varistor can undertake large thundering impulsive energy per unit volume when it is impulsed by a 8/20μs impulse current and the variation of V1mA value is very small.The study of the microstructure of this varistor shows that the grain and boundary of this varistor is uniform and the grain is very small.

关 键 词：化学掺杂合成 氧化锌 瓷料 压敏电阻 微观结构 

分 类 号：TQ174.756[化学工程—陶瓷工业]