单晶硅线锯切片亚表层损伤层厚度预测与测量  

Prediction and Measurement of Subsurface Damage Thickness of Silicon Wafer in Wire Saw Slicing

作　　者：高玉飞[1] 葛培琪[1] 李绍杰[1] 侯志坚[1] 

机构地区：[1]山东大学,济南250061

出　　处：《中国机械工程》2009年第14期1731-1735,共5页China Mechanical Engineering

基　　金：国家自然科学基金资助项目(50475132)

摘　　要：将线锯加工中磨粒的切削作用过程近似为受法向力与切向力作用的压头移动过程,基于压痕断裂力学理论,综合考虑磨粒下方弹性应力场与残余应力场对中位裂纹扩展的影响,给出了中位裂纹扩展长度的计算公式。将中位裂纹扩展层深度视为亚表层损伤层厚度dSSD,将磨粒下方横向裂纹产生深度视为锯切后表面的表面粗糙度值Rz,从而建立了亚表层损伤层厚度与表面粗糙度值之间的理论模型,用于预测损伤层厚度;使用扫描电子显微镜(SEM),采用截面显微法对硅片的亚表层裂纹层厚度进行了实验检测。结果表明,实验检测结果与理论预测结果较为接近,采用该理论模型能够快速、简便和准确地预测亚表面损伤层厚度。An abrasive machining in wire sawing process was considered as moving indention subjected to normal force and tangential force. Based on indentation fracture mechanics theory,the calculation formula of median crack propagation length was analyzed by synthetically considering the contributions of elastic stress field and residual stress field beneath the abrasive. The depth of median crack propagation layer was postulated as equal as to the subsurface damage layer thickness （dSSD）,and the lateral crack depth was equal to the surface roughness Rz,thereby a theoretical model of relationship between dSSD and Rz was founded for predicting the dSSD. Moreover, a bonded interface sectioning technique with scanning electron microscope（SEM） was employed to measure the silicon dSSD. The results indicate that the experimental measurement values coincide with the theoretical prediction ones comparatively. The theoretical model can be used for predicting dSSD rapidly,expediently and accurately.

关 键 词：线锯 单晶硅 亚表面损伤 表面粗糙度 裂缝 

分 类 号：TQ164[化学工程—高温制品工业] TG74[金属学及工艺—刀具与模具]