La^(3+)、Cu^(2+)、Fe^(3+)/TiO_2对金属-半导体表面肖特基势垒的影响  

Study on the influence of La^(3+)、Cu^(2+)、Fe^(3+)/TiO_2 on Schottky barrier on the surface of metal-semiconductors

作　　者：康华[1] 李桂春[1] 单志强[1] 

机构地区：[1]黑龙江科技学院资源与环境工程学院,黑龙江哈尔滨150027

出　　处：《工业催化》2009年第7期66-69,共4页Industrial Catalysis

基　　金：黑龙江省教育厅科学技术研究项目(11511346)

摘　　要：分析了金属-半导体表面的接触机理及肖特基势垒的形成,探讨了离子掺杂行为对势垒的影响机理,研究了光生载流子的迁移对TiO_2半导体复合材料光催化活性的影响。结果表明,不同金属基体材料对表面势垒高度的影响程度不同,同掺杂离子的表面态对金属-半导体接触的影响也有差别,离子可以改变半导体功函数,La^(3+)、Cu^(2+)和Fe^(3+)在同一浓度掺杂,对半导体的功函数影响不同,使载体和离子对电子和空穴捕获能力有所差异。The mechanisms for contact between metal and semiconductor surface and formation of Schottky barriers were discussed. The influence of ions-doping on the barriers and effects of e-h^＋ transfer on photocatalytic activity of TiO2 films were studied. The results indicated that different metal substrates had different influence on Schottky barriers; doping ions changed work function of the semiconductor; different doping ions metal with the same concentration changed work function of the semiconductor to different extent, thus changed Schottky barriers, resulting in different photocatalytic activity of TiO2 films.

关 键 词：催化化学 肖特基势垒 光催化活性 离子掺杂 

分 类 号：O643.36[理学—物理化学] O644[理学—化学]