Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique  

作　　者：安霞 范春晖 黄如 张兴 

机构地区：[1]Institute of Microelectronics, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2009年第8期317-319,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60625403, 60806033 and 90207004, the National Basic Research Program of China under Grant No 2006CB302701, and the New Century Excellent Talent Project （NCET） of the Ministry of Education of China.

摘　　要：Modulation of Schottky barrier height （SBH） is successfully demonstrated by a germanidation-induced dopant segregation technique. The barrier height of NiGe/Ge Schottky diodes is modulated by 0.06-0.15 eV depending on annealing temperature. The results show the change of SBH is not attributed to the phase change of nickel germanides but to dopant segregation at the interface of germanides/germanium which causes the upward conduction energy band. In addition, we first observe a Raman peak at about 217cm^-1 corresponding to NiGe, which has not been reported till now. The surface morphology of nickel germanides can be improved by BF2 implantation before germanidation. The results may provide guidelines for the design of Sehottky source/drain germanium-based devices.Modulation of Schottky barrier height （SBH） is successfully demonstrated by a germanidation-induced dopant segregation technique. The barrier height of NiGe/Ge Schottky diodes is modulated by 0.06-0.15 eV depending on annealing temperature. The results show the change of SBH is not attributed to the phase change of nickel germanides but to dopant segregation at the interface of germanides/germanium which causes the upward conduction energy band. In addition, we first observe a Raman peak at about 217cm^-1 corresponding to NiGe, which has not been reported till now. The surface morphology of nickel germanides can be improved by BF2 implantation before germanidation. The results may provide guidelines for the design of Sehottky source/drain germanium-based devices.

关 键 词：sea surface nonliear interaction numerical method 

分 类 号：TN311.7[电子电信—物理电子学] TN249