硅基射频螺旋电感的在片测试和剥离方法  

Measurement and de-embedding of on-chip spiral inductors on Si substrates

作　　者：石新明[1] 唐祯安[1] 邹娟[1] 

机构地区：[1]大连理工大学电信学院电子系,大连116023

出　　处：《电子测量与仪器学报》2009年第7期107-111,共5页Journal of Electronic Measurement and Instrumentation

基　　金：国家自然科学基金(编号:90607003)资助项目

摘　　要：使用无锡上华0.5μm（DPTM）标准CMOS工艺制备了螺旋电感芯片,利用矢量网络分析仪和探针台搭建了硅基螺旋电感测试装置,对该硅基螺旋电感进行了测试。采用两种去除电路寄生参数的剥离方法,分析了高频条件下各种测试寄生参量的影响。建立了基于0.5μm（DPTM）标准CMOS工艺在片螺旋电感的寄生参量单π等效电路模型,详细列出了在片螺旋电感测试和寄生参数的剥离步骤,测试结果在0.1~8.5 GHz范围内与三维电磁场（HFSS）仿真结果有很好的一致性,验证了此方法在片上螺旋电感测试中的有效可行性。The spiral inductor is made by the CSMC 0.5μmDPTM standard CMOS technology and measured by vector network analyzer and probe platform. Put the measurements used in RF and MW into the on-chip spiral inductors. Analyzed the effect of parasitical parameter for the measurement at high frequency and measured the on-chip spiral inductors by that. Parasitical parameters circuit models for the measurement of on-chip spiral inductors by standard 0.5 μm （DPTM） CMOS technology is also developed. The methods of measurements and parasitical parameters of de-embedding are discussed clearly. According to the results, the measurements show excellent agreement with the re- sults of the electromagnetic solver（HFSS） over a frequency from 0.1 GHz to 8.5 GHz,so it＇s a good measurement at high frequency.

关 键 词：在片螺旋电感 电路模型 在片测试法 剥离 

分 类 号：TN3[电子电信—物理电子学]