用于调Q的高压、超快脉冲发生器  

High Speed and Voltage Pulse Generation for Q-Switching

作　　者：朱琳[1] 刘爽[1] 张伟[1] 陈煦[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《现代电子技术》2009年第15期101-103,107,共4页Modern Electronics Technique

摘　　要：为得到用于调Q的高速高压脉冲,介绍一种基于Max Bank原理的纳秒脉冲发生器设计及实现。电路分两级组成,第一级是经74LS123整形过的脉冲触发单管产生预雪崩级脉冲,第二级采用级联雪崩晶体管串。电路板采用微带线结构,通过同轴脉冲形成线,对脉冲形状进行优化。最终获得输出阻抗50Ω,脉冲峰峰值1.48 kV,脉冲前沿为200 ps的高压、高速大电流脉冲。同时对晶体管的选择、触发脉冲的产生也做了介绍,对PCB板的设计中应注意的问题做了相应的说明。In order to obtain a high speed and voltage electrical pulse for Q - switching, a generator which can produce nanosecond rise - time pulse is introduced. The circuit is designed in two grades, the first grade is connected with shaped pulse from 74LS123,and the second grade consists of two bunches Of avalanche transistors connected in a Max bank circuit. The transistors are mounted on PCB board using microstrip structure and using coaxial line to shorten the rise - time. Result shows that,using 50 Ω load,the output peak to peak voltage is 1.48 kV. The rise time is about 200 ps. The selection of avalanche transistors and the method to generate trigger pulse are also introduced. The things which should pay special attention to in the PCB board design are categorized and explained in detail.

关 键 词：调Q 高压脉冲 雪崩晶体管 微带线 

分 类 号：TN784[电子电信—电路与系统]