低能电子在固体表面背散射系数的直接Monte Carlo方法模拟  

Detailed Monte Carlo Simulation of Low Energy Electron Backscattering from Solids

作　　者：卓俊[1] 牛胜利[1] 黄流兴[1] 朱金辉[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《计算物理》2009年第4期586-590,共5页Chinese Journal of Computational Physics

摘　　要：应用单次碰撞的直接Monte Carlo方法计算能量范围从100 eV^10 keV的电子在固体Al,Si,Au表面的背散射系数,其中低能电子在固体中的弹性散射和非弹性散射截面分别应用Mott散射截面和Born近似下的广义振子强度计算模型得到.通过与压缩历史Monte Carlo方法的模拟计算结果及实验值的比较,结果表明,对于100 eV^10 keV范围的低能区电子,采用直接方法计算得到的电子背散射系数与实验值符合较好,直接方法比压缩历史方法更适合于能量在10 keV以下的电子输运计算.Backscattering coefficients of low energy electron beams （from 100 eV to 10 000 eV） impinging on solids （Au, Si and AI） are simulated with detailed Monte Carlo code in which all interaction experienced by single electron are simulated in chronological succession. Mott cross-section and atomic generalized-oscillator-strength model within Born approximation are used to calculate elastic and inelastic scatterings in solid, respectively. Compared with various Monte Carlo codes it is concluded that detailed Monte Carlo code provided better agreement with experimental results at electron energies less than 10 keV.

关 键 词：低能电子 背散射系数 直接MonteCarlo方法 压缩历史MonteCarlo方法 

分 类 号：O562.5[理学—原子与分子物理]