GEANT4SPE质子屏蔽和半导体材料辐射效应模拟  

GEANT4-Based Simulation on Shielding and Radiation Effects of SPE Protons in Semiconductors

作　　者：路伟[1,2] 王同权[1] 王尚武[1] 陈达毅[3] 王兴功 

机构地区：[1]国防科技大学光电科学与工程学院,湖南长沙410073 [2]解放军疾病预防控制所,北京100071 [3]西昌卫星发射中心,四川西昌615000

出　　处：《计算物理》2009年第4期591-596,共6页Chinese Journal of Computational Physics

摘　　要：利用蒙特卡罗软件GEANT4模拟太阳宇宙射线中能量为1 MeV^10 GeV质子对航天飞行器的影响,透射质子对半导体材料的损伤效应,计算外壳铝层对质子能谱的屏蔽效应.模拟结果表明,质子在介质中的线性能量转移、射程等和参考数据吻合较好;沿质子轨迹纵向能量沉积出现Bragg峰,且非弹性作用是影响能量沉积Bragg曲线的重要因素;对于半导体Si材料,反冲原子主要分布在质子轨迹线周围,并沿轨迹线横向‘扩散’,浓度降低;Al层屏蔽使入射质子能谱硬化,当Al层厚度超过10 mm时,厚度增加对屏蔽效果的改善不明显,反而次级粒子辐射增强效应变大.We simulate radiation effects of solar cosmic protons on spacecraft and satellites with a Monte Carlo software GEANT4. Damage induced by proton irradiation and shielding of A1 layer are calculated. Linear energy transfer and range in materials agree well with referenced data. Energy deposited in incident direction shows a Bragg curve and nonelastic interactions show important impact. In Si recoil atoms are mainly distributed along incident proton trajectory and isolated recoils distribute along lateral direction with lower concentration. Al shielding layer shows a shielding on high energetic protons. Shielding is hardly changed as layer thickness is larger than 10mm. On the contrary, secondary production increases obviously.

关 键 词：GEANT4 线性能量转移 射程 反冲原子 

分 类 号：O571.33[理学—粒子物理与原子核物理]