激光二极管腔体有源区长度的优化设计  

Optimization Design of Active Cavity Length for Laser Diode

作　　者：成强[1] 向兵[1] 张奇惠[1] 王渊旭[1] 

机构地区：[1]河南大学物理与电子学院,河南开封475004

出　　处：《河南大学学报（自然科学版）》2009年第4期349-352,共4页Journal of Henan University:Natural Science

基　　金：河南省科技厅基础前沿计划项目(082300410010)

摘　　要：由激光二极管(LD)输入、输出的关系,得到激光器腔体参数与注入电流的关系,进而给出在设计激光器时遇到的相关限制的方程,以及LD电流与某种形式的电流增益转换因子的关系,根据增益曲线上的最佳工作点可优化腔体长度参数.讨论了共面LD在固定总腔长、固定无源区长度、固定有源与无源区的长度比等条件下有源区长度的优化.The relationship between laser cavity parameter and the injection current can be obtained based on input electrical power and outopt light power of Laser Diode （LD）, then the limit equation of LD design, i. e. , the relationship between LD current and conversion factor of current gain, is given accordingly. The cavity length parameter is optimized according to the optimal point of the gain curve. It discusses fixed active cavity length, fixed inactive cavity length, fixed rate of the active cavity length and the inactive cavity length, design of the active cavity length of a narrow-stripe Laser Diode.

关 键 词：激光二极管 腔体参数 有源区长度 优化设计 

分 类 号：TN248.4[电子电信—物理电子学]