基底温度对四元叠层硒化法制备铜铟镓硒(CIGS)薄膜的影响  

Effect of substrate temperature on CIGS thin films prepared by quarternary laminating selenization proces

作　　者：谢华木[1] 廖成[1] 焦飞[1] 周震[1] 韩俊峰[1] 赵夔[1] 陆真冀[1] 

机构地区：[1]北京大学重离子物理研究所,北京100871

出　　处：《真空》2009年第4期9-11,共3页Vacuum

摘　　要：利用四元叠层硒化法制备了铜铟镓硒(缩写为CIGS)薄膜,重点分析了在叠层法制备CIGS薄膜过程中,基底温度对CIGS薄膜的晶体结构,表面形貌以及各种元素沿深度分布的影响。实验结果表明,在叠层法制备CIGS薄膜时,发现在550℃的基底温度时,不经过退火便可以生成CIGS晶体,表面Ga的含量处于比较合适的范围。而基底温度为500℃,450℃时,只能生成铜铟硒(CIS)晶体,Ga元素表面的含量较少,主要分布在薄膜底部。The CIGS （Cu-In-Ga-Se） thin films were prepared by the quaternary laminating selenylation process, where the effect of substrate temperature on the crystalling structure, surface mophorlogy and distribution of different elements along film thickness were investigated in depth during the process. Testing results revealed that the CIGS crystallization is available without annealing when the substrate temperature is 550% and that the Ga content on crystal surface is in an appropriate range. On the other hand, only the CIS （Cu-In-Se） crystals are available when the substrate temperature is 500℃ or 450℃, of which the Ga content on the surface is less and mainly distributed at the bottom of the film.

关 键 词：铜铟镓硒薄膜 叠层硒化法 热处理 

分 类 号：O484[理学—固体物理] TN403.2[理学—物理]