多路V/I输出的高性能CMOS带隙基准源  

High Performance CMOS Bandgap Voltage Reference Source with Multiple V/I Output

作　　者：张正旭[1] 李少青[1] 马卓[1] 肖海鹏[1] 

机构地区：[1]国防科技大学计算机学院,长沙410073

出　　处：《微电子学》2009年第4期503-507,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60873016;60876024);国家高技术研究发展(863)计划基金资助项目(2007AA01Z102;2008AA01Z147)

摘　　要：在传统CMOS带隙基准源的基础上，采用温度补偿和差分负反馈的方法，提出了一种多路V／I输出的高性能CMOS带隙基准源结构。基于0．5μmCMOS工艺，进行了设计实现。HSPICE仿真结果表明，该带隙基准源具有较低的温度系数（7．9×10^-6／℃，0-100℃），电源电压从1．9V变化到5．5V，输出仅变化1．8mV，基准源输出为1．233V，分压电路产生多路输出，基准电流4μA，温度系数均小于12×10^-6／℃（-25℃～125℃）。A high performance CMOS bandgap voltage reference with multiple V/I output using temperature compensation and differential negative feedback methods was proposed based on conventional CMOS bandgap reference. The circuit was implemented in 0. 5 btm CMOS technology. HSPICE simulation results showed that it had a low temperature coefficient of 77.9×10^-6/℃, from 0℃to 100℃, and an output reference voltage of 1. 233 V with discrepancy of only 1.8 mV at voltages from 1.9 V to 5. 5 V. The voltage division circuit generates multiple V/I outputs, and the reference source outputs 4μA of reference current, with temperature coefficient less than 12×10^-6/℃ from-25 ℃ to 125 ℃.

关 键 词：带隙基准源 多路V/I输出 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]