PN结型器件在氚钛片辐照下电输出性能  

Electrical properties of PN junction devices under tritium irradiation

作　　者：王关全[1] 杨玉青[1] 张华明[1] 胡睿[1] 魏洪源[1] 熊晓玲[1] 高晖[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,绵阳621900

出　　处：《核技术》2009年第8期584-587,共4页Nuclear Techniques

基　　金：中国工程物理研究院科学技术发展基金(2007A02001)资助

摘　　要：用多片具有不同金属钛膜厚度和充氚量的氚钛片对两种单晶硅基PN结型器件进行了辐照,在线测量了它们的电输出性能并进行了定性分析。结果表明,在本文所采用的钛膜厚度和氚量级下,器件输出短路电流等随充氚量增加而小幅增大,但不成正比关系;器件的掺杂浓度、结深等结构参数对器件电输出性能影响较大。Two kinds of silicon PN junction device were made for irradiation by titanium tritide sources of different activities, and the electrical outputs were measured and analyzed. The results showed that the Iac （short circuit current）, Voc （open circuit voltage） and Pmax（maximum power output） increased with the tritium content, but the increases were not proportional to the tritium content. The electrical properties were affected by doping concentration and junction depth of the devices.

关 键 词：PN结 氚钛片 辐射伏特效应同位素电池 电输出性能 

分 类 号：TM910.2[电气工程—电力电子与电力传动]