Study of top and bottom contact resistance in one organic field-effect transistor  

Study of top and bottom contact resistance in one organic field-effect transistor

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作  者:刘舸 刘明 王宏 商立伟 姬濯宇 刘兴华 柳江 

机构地区:[1]Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences

出  处:《Chinese Physics B》2009年第8期3530-3534,共5页中国物理B(英文版)

基  金:supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204);National Natural Science Foundation of China (Grant Nos 60676001,60676008 and 60825403)

摘  要:This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.

关 键 词:organic field-effect transistor top contact geometry bottom contact geometry hybrid contact geometry 

分 类 号:TN386[电子电信—物理电子学] TM503.5[电气工程—电器]

 

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