Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors  

作　　者：田雪雁 徐征 赵谡玲 张福俊 袁广才 徐叙瑢 

机构地区：[1]Institute of Optoelectronics Technology,Beijing Jiaotong University [2]Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education

出　　处：《Chinese Physics B》2009年第8期3568-3572,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos 10774013,10804006);the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070004024);The Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA Program (Grant No 2007A024);the 111 Project(Grant No B08002)

摘　　要：This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly（3-hexylthiophene） （RR-P3HT） field-effect transistors （FETs）. The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78×10^-3 cm^2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm^2/Vs by thermal annealing at 150 ℃, and the value of on/off current ratio can reach 104.This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly（3-hexylthiophene） （RR-P3HT） field-effect transistors （FETs）. The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78×10^-3 cm^2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm^2/Vs by thermal annealing at 150 ℃, and the value of on/off current ratio can reach 104.

关 键 词：field-effect transistors regioregular poly（3-hexylthiophene） concentration annealing field-effect mobility 

分 类 号：TN386[电子电信—物理电子学] TN304.23