半导体激光器线阵的瞬态热特性研究  

Transient Thermal Characteristic of Laser Diode Bars

作　　者：张蕾[1] 崔碧峰[2] 李明[1] 郭伟玲[2] 王建军[1] 沈光地[2] 

机构地区：[1]北京跟踪与通信技术研究所,北京100094 [2]北京工业大学光电子技术实验室,北京100022

出　　处：《半导体光电》2009年第4期498-501,共4页Semiconductor Optoelectronics

基　　金：国家重点基础研究发展计划资助项目(2006CB604902);国家自然科学基金项目(60506012)

摘　　要：针对半导体激光器线阵,建立了二维的热传导模型,模拟计算得到了半导体激光器线阵的二维瞬态温度分布。分析表明器件温度随时间的变化过程可分为三个阶段:在加电后几十微秒的时间内,发光单元之间未出现热交叠,不同填充比的线阵器件的温度基本一致;在几十微秒到几十或几百毫秒之间,大填充比结构线阵的发光单元之间先发生了热交叠,温度上升较快;微通道制冷的器件在几十毫秒之后温度达到稳定,平板热传导热沉封装的器件在几百毫秒之后温度才达到稳定。热传导热沉封装时,在相同的注入电流密度下,高填充比器件的发光单元之间出现温差更快。A two-dimension thermal model is presented for laser diode bars and the transient temperature distribution is simulated and discussed. It is found that the transients display three time ranges with different temperature slopes： in the range before some ten microseconds, the temperature difference is small between the bars with different fill factors; in the range between some ten microseconds and some ten to hundred milliseconds, the temperature of bars with high fill factor increases rapidly; at some ten milliseconds, a steady-state thermal distribution is nearly reached for the bars bonded on the micro-channel heat sink. While a steady-state thermal distribution is reached at some hundred milliseconds for the bars bonded on the heat conducting sink. Temperature difference between the emitters appears earlier for the bars with high fill factor at the same injecting current.

关 键 词：激光技术 半导体激光器线阵 热特性 瞬态 

分 类 号：TN248.4[电子电信—物理电子学]