DNA-CTMA薄膜制备及其光电特性表征  

Preparation and Photo-electric Properties of DNA-CTMA Film

作　　者：周骏[1] 金嫦香[1] 张飞雁[1] 丁海芳[1] 任海东[1] 王振永[1] 

机构地区：[1]宁波大学理学院物理系,浙江宁波315211

出　　处：《光电工程》2009年第8期27-32,共6页Opto-Electronic Engineering

基　　金：浙江省钱江人才计划项目(2007R10015);宁波市重点实验室开放基金(2007A22006)资助课题

摘　　要：采用离子交换法制取DNA-CTMA复合物，再通过自组装成膜法和旋涂法制备DNA-CTMA薄膜。通过DNA-CTMA薄膜在紫外／可见光／红外及远红外区的吸收光谱、薄膜的折射率与交流电阻的测量，研究了薄膜的光电特性。实验结果表明：DNA-CTMA薄膜的透光性很好，只在紫外230～315nm区间和红外2．7-3．34μm区间出现吸收以及在红外3418nm和3504nm两处有强吸收峰，在通信波段没有明显吸收。此外，分析了薄膜制备过程中，残留丁醇及制膜温度和干燥时间对薄膜折射率的影响。薄膜交流电阻的测量显示，50bp短链的DNA—CTMA薄膜的交流电阻率比2000bp长链DNA-CTMA薄膜小2-3个数量级。DNA-CTMA complexes were prepared by ion-change method and DNA-CTMA thin films were fabricated by self-assembled and spin-coating methods. The photo-electrical properties of DNA-CTMA thin films were characterized by the measurement of the absorption spectra in the UV/vis/inf and far-infrared, refractive index and Alternating Current （AC） resistivity. The experiment results show that the transmissivity of the DNA-CTMA thin films is high in the telecommunication wavelengths, and there is a strong absorption only in the ultraviolet range of 230-315 nm and the infrared range of 2.7-3.34 ~tm, including two strong absorption peaks at 3 418 nm and 3 504 nm in the absorption spectra. Furthermore, in the preparation process of the films, the some factors of influencing the refractive index of film were analyzed, such as the butanol remained in film, temperature and the dry time. And the AC resistivity of 50 bp short DNA-CTMA thin film is less 2-3 orders of magnitude than the 2 000 bp longer DNA-CTMA thin film.

关 键 词：DNA DNA-CTMA 吸收光谱 折射率 交流电阻率 

分 类 号：TN252[电子电信—物理电子学] O484.41[理学—固体物理]