InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)  

Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology

作　　者：齐志华[1] 李献杰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第8期721-725,共5页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助项目(2003CB314901)

摘　　要：InP/GaAsSb/InP双异质结双极晶体管(DHBT)以其独特的交错Ⅱ型能带结构,在频率特性、击穿特性和热特性等方面较传统的InP/InGaAsSHBT与InP/InGaAs/InPDHBT等显示出极大的优越性。对InP/GaAsSb/InPⅡ型DHBT技术的提出、外延层结构设计与生长、器件结构设计、器件制造工艺与优化以及国内外发展情况研究水平、发展趋势和商业化情况进行了系统的回顾和展望。指出结合垂直方向材料结构优化缩小器件尺寸和采用微空气桥隔离基极电极结构是InP/GaAsSb/InPDHBT向THz截止频率发展的最重要的技术路线。InP/GaAsSb/InP DHBTs （double heterojunction bipolar transistor） show great advantage compared with the traditional InP/InGaAs SHBTs and InP/InGaAs/InP DHBTs in the performance of frequency, breakdown voltages and thermal properties for their special staggered II-type band alignment structure. The motivation for the idea of II-type InP/GaAsSb/InP DHBTs, the epitaxial structure design and growth, device structure design, fabricating process and optimization as well as the status of related overseas and domestic investigations, development, trend and commercialization of the technology are reviewed and predicted. Scaling in device dimensions with improvement in vertical epitaxial layer structure and using microairbridge isolated base contact are the most important technologies for InP/GaAsSb/InP DHBTs to reach THz cut-off frequencies.

关 键 词：GaAsSb/InP 双异质结双极晶体管 单异质结双极晶体管 Ⅱ型双异质结双极晶体管 微空气桥 

分 类 号：TN385[电子电信—物理电子学]