高精度CMOS DEM-CCⅡ放大器  

High-Precision CMOS DEM-CCⅡ Amplifier

作　　者：张雷[1] 成立[1] 周洋[1] 张静[1] 倪雪梅[1] 王振宇[1] 

机构地区：[1]江苏大学电气与信息工程学院,江苏镇江212013

出　　处：《半导体技术》2009年第8期787-790,共4页Semiconductor Technology

基　　金：国家"863"计划项目(2006AA10Z258)

摘　　要：采用动态元件匹配二代电流传输器(DEM-CCⅡ)技术,设计了一种0.35μm标准工艺的高精度CMOS放大器。通过比较传统的CMOS运放可知,所设计的CMOS放大器既增大了输出摆幅又减小了输出阻抗,且有效地限制了有限的运放增益对电路性能的影响。仿真实验结果表明,该CMOS放大器增益误差比传统运放的增益误差小38～50倍,精度等级明显提高,因而特别适用于各类检测和信号调理放大器的设计中。CMOS amplifiers with high-precision was designed in a standard 0.35 μm CMOS process by properly applying dynamic element matching to a second generation current conveyor. Compared with traditional CMOS circuits, the proposed approach alleviates the tradeoff between output swing and output resistance and is more robust against the finite operational amplifier gain. The simulation results show that the gain error is reduced 38 - 50 times than the gain error of operational amplifiers, and the precision is improved, it is very suitable for the design of various detections and signal conditioning amplifiers.

关 键 词：二代电流传输器 输入失调 1/f噪声电压 高精度 

分 类 号：TN722[电子电信—电路与系统]