3MV自耦式紫外预电离开关的设计  

Design of 3 MV UV illumination switch

作　　者：李俊娜[1] 薛斌杰[1] 贾伟[1] 陈维青[1] 汤俊萍[1] 邱爱慈[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2009年第8期1255-1258,共4页High Power Laser and Particle Beams

基　　金：国防科技基础研究基金资助课题

摘　　要：基于紫外预电离技术和阻容耦合电路研制了应用于高功率装置的三串联3MV自耦式紫外预电离开关。该开关由紫外预电离间隙和开关主间隙组成。根据同类开关在脉冲电压下的击穿数据推算出3MV开关的间隙距离，开关主间隙的电场不均匀系数为1．58。采用台阶屏蔽技术使开关有机玻璃筒外沿面最大电场小于50kV／cm，满足设计要求。设计紫外预电离间隙击穿电压为主脉冲电压的1％，理论模拟计算表明，在0．1～0．7MPa范围内，预电离间隙电压大于在此范围内间隙击穿电压，保证可靠预电离。A UV illuminated switch of three sections in series was designed based on UV illumination technology and capaeitance-resistance coupling circuit. The switch consists of UV illumination gap and selbbreakdown gaps. The distance of self-breakdown gap was calculated based on the experimental data of same switch under pulse with 240 ns risetime. The nonuniform factor of self-breakdown gap is 1.58. The step shield of outer cylinder was used to get the surface field no more than 50 kV/cm. The voltage of UV illumination gap was designed as about 1~ of the voltage of self breakdown gap. It was indicated that the voltage of UV illumination gap is higher than breakdown voltage of rod-rod electrode within 0.1-0.7 MPa.

关 键 词：脉冲气体开关 紫外预电离 绝缘 电场分布 脉冲功率技术 

分 类 号：TM836[电气工程—高电压与绝缘技术]