Sn掺杂Bi-Sr-Co-O层状氧化物的热电性能  

Thermoelectrical properties of Sn doped Bi-Sr-Co-O layered misfit oxides

作　　者：刘鑫鑫[1] 沈俊杰[1] 朱铁军[1] 杨胜辉[1] 赵新兵[1] 

机构地区：[1]浙江大学材料系硅材料国家重点实验室,浙江杭州310027

出　　处：《功能材料》2009年第8期1326-1328,1337,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50601022);国家高技术研究发展计划(863计划)资助项目(2007AA03Z234)

摘　　要：采用固相烧结法制备了掺Sn的层状热电氧化物Bi2-ySnySr2Co2O9-δ(y=0、0.02、0.04、0.06、0.08、0.10)。XRD结果表明Bi-Sr-Co-O氧化物样品存在一定程度的织构。Seebeck系数为正,说明该氧化物为p型半导体。掺Sn后电导率和热导率均增大。对于Seebeck系数和功率因子,存在着掺Sn量的最优值,即Bi1.96Sn0.04Sr2Co2O9-δ。掺Sn样品的最高ZT值比未掺Sn样品提高了约2倍。A series of Sn doped Bi2-ySnySr2Co2O9-δ（y=0, 0.02, 0.04, 0.06, 0.08, 0.10） samples was synthesized by solid state reaction method. The XRD results demonstrate the preferred alignment of Bi-Sr-Co-O grains due to the layered structure of the compounds. The positive Seebeck coefficients reveal that Bi-Sr-Co-O is p-type conductive. The Sn-doping increases the electrical conductivity as well as the thermal conductivity, while the Bi1.96Sn0.04Sr2Co2O9-δ sample exhibits highest Seebeck coefficient and power factor among all the samples. A highest ZT value of 0.08 has been obtained at 773K for y=0.04, about two times higher than that of the BSCO sample without Sn doping.

关 键 词：热电材料 钴基层状氧化物 锡掺杂 

分 类 号：TN304[电子电信—物理电子学]