磁控溅射共沉积Al-Pb复合薄膜微观结构及电性能  

Microstructure and Electrical Properties of Al-Pb Composite Thin Films by Magnetron Co-deposition

作　　者：郭中正[1] 孙勇[1] 段林昆[1] 李玉阁[1] 彭明军[1] 

机构地区：[1]昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

出　　处：《材料导报》2009年第16期12-15,共4页Materials Reports

基　　金：云南省自然科学基金重点资助项目(2004E0004Z);云南省自然科学基金资助项目(2006E0018Q)

摘　　要：采用磁控溅射共沉积法制备Al-Pb复合薄膜,运用TEM、SEM、EDX和电阻-温度仪对薄膜微观结构和电性能进行研究。结果表明,Al-Pb薄膜具有温度敏感性,电阻温度系数(TCR)可达8.4×10-3℃-1。薄膜微观结构含富Al基体相和富Pb第二相,呈两相组织。随着厚度的增大,第二相粒子及基体相晶粒粒度增大,界面密度降低,界面电子散射效应减弱,电阻率下降,TCR值增大。与Al膜和移去Al基体形成的Pb膜的电性能对比研究显示,Al-Pb薄膜存在并联导电机制,电阻率受两相电阻率和体积分数的影响。The microstructure and electrical properties of Al-Pb composite thin films are investigated by TEM, SEM, EDX and resistance-temperature apparatus, which are fabricated by magnetron co-deposition technique. The results show that Al-Pb thin films are temperature-sensitive and the temperature coefficient of resistivity（TCR） can achieve 8. 4×10^-3 ℃^-1. The microstructure of Al-Pb thin films is two-phase structure consisting of Al-rich matrix and Pb-rich second-phase. The grain size of matrix phase and the particle size of second-phase in films increase with incerasing thickness, resulting in the density of interfaces, the interface electron scattering effect and the resistivity decreasing. Compared with the electrial properties of Al thin films and Pb thin films formed by removed Al matrix it is found that APPb composite thin films exhibit parallel-type mechanism of electric conductance, and the resistivity is influenced by the electrical resistivity and the volume fraction of two phases.

关 键 词：Al-Pb复合薄膜 磁控共沉积 微观结构 温度敏感性 电阻温度系数 

分 类 号：TB43[一般工业技术] TN305.92[电子电信—物理电子学]