Visible photoluminescence of porous silicon covered with an HfON dielectric layer  

作　　者：蒋然 张燕 

机构地区：[1]School of Physics,Shandong University [2]School of Information Science and Engineering,Shandong University

出　　处：《Journal of Semiconductors》2009年第8期14-17,共4页半导体学报（英文版）

基　　金：supported by the China Postdoctoral Science Foundation (No.20080431176);the Shandong Special Fund for Postdoctoral Innovative Project (No.200702027);the Doctoral Fund of the Ministry of Education of China (No.200804221006)

摘　　要：With HfON filling the holes in porous silicon （PS）, films with improved photoluminescence （PL） at room temperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect （QLE） and the polycrystalline structure of HfON is responsible for the observed PL peaks. The stoichiometric proportion of N/O in the HfON layer has also a great influence on the intensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened for the incorporation of HfON.With HfON filling the holes in porous silicon （PS）, films with improved photoluminescence （PL） at room temperature were prepared. A strong blue peak at 425 nm and a red peak at 690 nm were observed in PL spectra. It is believed that the quantum-limited effect （QLE） and the polycrystalline structure of HfON is responsible for the observed PL peaks. The stoichiometric proportion of N/O in the HfON layer has also a great influence on the intensity of blue light emission. Finally, the temperature quenching effect was observed to be greatly weakened for the incorporation of HfON.

关 键 词：hafnium oxynitride dielectrics diffusion luminescence POROSITY 

分 类 号：TN304.12[电子电信—物理电子学]