Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition  

作　　者：梁庭 李珺泓 杜文龙 薛晨阳 张文栋 

机构地区：[1]Key Laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education,North University of China

出　　处：《Journal of Semiconductors》2009年第8期28-30,共3页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2006AA040601)

摘　　要：PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1（2TO） mode and the A1（3TO）T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1（2TO） mode and the A1（3TO）T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

关 键 词：PZT Raman scattering phase transition 

分 类 号：TN304.055[电子电信—物理电子学]