Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions  

作　　者：陈晓锋 陈诺夫 吴金良 张秀兰 柴春林 俞育德 

机构地区：[1]Key Laboratory of Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences [2]National Laboratory of Microgravity,Institute of Mechanics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第8期47-51,共5页半导体学报（英文版）

基　　金：supported by the Space Agency of China and the Chinese Academy of Sciences

摘　　要：A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

关 键 词：chemical etching etch pit defect growth striations CONVECTION 

分 类 号：TN304.2[电子电信—物理电子学]