(NH_4)_2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights  

作　　者：胡爱斌 王文武 徐秋霞 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第8期56-59,共4页半导体学报（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China(No.2006CB302704)

摘　　要：The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.The effect of Si （100） surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by （NH4）2S solution, which was attributed to physical adsorption of S atoms. SEM and XPS analyses reveal that Si surface atoms were chemically bonded with S atoms after Si surface treatment in NH4OH and （NH4）2S mixing solution. This induces a more ideal value for the Schottky barrier height compared with a diode treated only by HF solution, indicating that surface states originating from dangling bonds are passivated with S atoms.

关 键 词：Schottky barrier （NH4）2S treatment dangling bonds I-V 

分 类 号：TN304.1[电子电信—物理电子学]