A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks  

作　　者：何进 马晨月 张立宁 张健 张兴 

机构地区：[1]School of Computer & Information Engineering,Shenzhen Graduate School,Peking University [2]EECS,School of Electronic Engineering and Computer Science,Peking University

出　　处：《Journal of Semiconductors》2009年第8期63-66,共4页半导体学报（英文版）

基　　金：supported by the Special Funds for the State Key Development Program for Basic Research of China;the National Natural Science Foundation of China (No.60876027)

摘　　要：A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.

关 键 词：high-k gate stack nanoscale MOSFETs interface trap and charges trapping and detrapping threshold voltage dynamic behavior compact modeling 

分 类 号：TN386[电子电信—物理电子学]