AlGaInP LEDs with surface anti-reflecting structure  

作　　者：陈依新 沈光地 李建军 韩金茹 徐晨 

机构地区：[1]Beijing Optoelectronic Technology Laboratory,Beijing University of Technology

出　　处：《Journal of Semiconductors》2009年第8期95-97,共3页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China (No.2006AA03A121);the State Key Development Program for Basic Research of China (No.2006CB604900);the Fund of Beijing University of Technology (No.ykj-2007-1073)

摘　　要：A kind of AlGaInP light emitting diode （LED） with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demonstrated theoretically and experimentally, and LEDs with the new structure have higher on-axis luminous intensity and larger saturation current than conventional LEDs and LEDs with ITO film only, which is caused by higher external quantum efficiency and also higher internal quantum efficiency. The new LEDs are especially suitable for working at large injected currents.A kind of AlGaInP light emitting diode （LED） with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demonstrated theoretically and experimentally, and LEDs with the new structure have higher on-axis luminous intensity and larger saturation current than conventional LEDs and LEDs with ITO film only, which is caused by higher external quantum efficiency and also higher internal quantum efficiency. The new LEDs are especially suitable for working at large injected currents.

关 键 词：quantum efficiency AlGaInP LEDs anti-reflecting structure 

分 类 号：TN312.8[电子电信—物理电子学] P618.13[天文地球—矿床学]