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机构地区:[1]State Key Laboratory of ASIC & System,Fudan University
出 处:《Journal of Semiconductors》2009年第8期132-135,共4页半导体学报(英文版)
基 金:supported by the National Natural Science Foundation of China(No.60676013)
摘 要:An improved switched-capacitor bandgap reference with a continuous output voltage of 1.26 V has been implemented with Chartered 0.35-μm 5-V CMOS process. The output offset voltage, induced by non-ideal characteristics of operational amplifier and bias current generator, is suppressed by the proposed sample-and-hold circuit and self-bias technique. Experimental results show that the proposed circuit operates properly under a supply voltage varying from 3 to 5 V. The measured temperature coefficient is 112 ppm/℃ and the power supply rejection ratio of output voltage without any filtering capacitor is -40 dB and -33 dB at 100 Hz and 10 MHz, respectively.An improved switched-capacitor bandgap reference with a continuous output voltage of 1.26 V has been implemented with Chartered 0.35-μm 5-V CMOS process. The output offset voltage, induced by non-ideal characteristics of operational amplifier and bias current generator, is suppressed by the proposed sample-and-hold circuit and self-bias technique. Experimental results show that the proposed circuit operates properly under a supply voltage varying from 3 to 5 V. The measured temperature coefficient is 112 ppm/℃ and the power supply rejection ratio of output voltage without any filtering capacitor is -40 dB and -33 dB at 100 Hz and 10 MHz, respectively.
关 键 词:bandgap reference SWITCHED-CAPACITOR OFFSET self-bias continuous output
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