氢热处理绝缘体表面对金属-绝缘体-金属开关器件I-V特性的影响  

Effect of Hydrogen-Treating the Surface of Insulator on I-V Characteristics in Metal-Insulator-Metal Element

作　　者：刘洪武[1] 吴渊[1] 马凯[1] 黄锡珉[1] 

机构地区：[1]中国科学院长春物理研究所液晶研究室,长春130021

出　　处：《吉林大学自然科学学报》1998年第3期52-54,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：在氢气气氛下对绝缘体表面进行热处理提高金属-绝缘体-金属（MIM）器件的I-V特性曲线的对称性，简化了该器件的制作工艺，并探讨底电极掺氮对MIM器件I-V特性曲线的影响，用n-n--n能带模型对MIM器件的I-V特性曲线对称性加以解释．A heat-treating of the surface of an insulator in hydrogen atmosphere can not only improve the symmetry of I-V characteristic of MIM element but also reduce the making process. Meanwhile,using a novel p-n-n band model for MId element, we can explain the new experimental phenomenon. On the other hand, we made further proof that the band model is suitable for interpreting many experimental phenomena in MIM element by studying the effect of doping nitrogen in tantalum on the I-V characteristic of MIM element.

关 键 词：液晶显示器 氢热处理 MIM器件 I-V特性 

分 类 号：TN141.9[电子电信—物理电子学]