退火对离子注入铌酸锂平面波导中折射率分布的影响  

The Influence of Annealing Treatment on the Refractive Index Profiles of Ion-implanted Lithium Niobate Planar Waveguides

作　　者：卢菲[1] 孟鸣岐[2] 李伟[2] 王凤翔[2] 王克明[2] 邴永红 

机构地区：[1]山东大学光学系,济南250100 [2]山东大学物理系,济南250100 [3]山东大学晶体材料研究所,济南250100

出　　处：《中国激光》1998年第8期699-702,共4页Chinese Journal of Lasers

基　　金：国家教委博士点基金资助项目;北京大学重离子物理实验室资助;山东大学晶体材料国家重点实验室开放课题

摘　　要：研究了不同退火条件对氢离子和氦离子注入铌酸锂平面波导中折射率分布的影响。在不同时间和温度下退火处理后用棱镜耦合法测量了两种波导的暗模 ,并给出退火处理前后两种波导的折射率分布。实验结果表明两种离子的注入均造成了损伤层中正常折射率的减小 ,而反常折射率在波导区却有所增加。退火处理对损伤层中的正常折射率分布影响较明显 ,而在 4 0We have studied the influence of different annealing conditions on refractive index profiles of He and H ions implanted lithium niobate planar waveguides. After annealing treatment with different times and different temperatures the dark modes of both kinds of waveguides are measured by using a prism coupling method. The refractive index profiles of both waveguides before and after annealing treatment are given. The results show that both He and H ions implantations result in the decrease of the ordinary refractive index in barriers, but in the region of guides the extraordinary refractive index increases. Annealing treatment influences the ordinary refractive index profiles obviously, but under 400℃ the annealing treatment almost has no influence on the extraordinary refractive index profiles.

关 键 词：离子注入波导 铌酸锂 退火 折射率分布 波导 

分 类 号：TN814.01[电子电信—信息与通信工程]