热处理温度及冷却速度对ZnO:Al薄膜性能的影响  

Effect of annealing temperature and cooling rate on the properties of sol-gel derived ZnO:Al thin films

作　　者：张锋[1] 孙惠娜[1] 刘静[1] 高美珍[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《兰州大学学报（自然科学版）》2009年第4期100-104,共5页Journal of Lanzhou University(Natural Sciences)

基　　金：甘肃省自然科学基金项目(041230);兰州大学磁学与磁性材料教育部开放式基金项目(MMM200804)

摘　　要：采用溶胶-凝胶法在普通玻璃衬底上制备出了Al^(3+)离子掺杂的ZnO(ZnO:Al)透明导电薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针法及紫外-可见分光光度计(UV-VIS)等分析方法对制备的薄膜进行了表征,研究了热处理温度及冷却速度对ZnO:Al薄膜结晶状况、电阻率、可见光透过率的影响.研究发现:制备的薄膜为具有沿(002)品面择优取向的ZnO六角纤锌矿结构,适当的热处理温度和冷却速度有利于改善ZnO:Al薄膜的导电性,并且当采用快速冷却时薄膜的导电性明显增强,而透光率略微减小.500℃热处理1 h后,-15℃环境中快速冷却相对于随炉冷却和空气中冷却制备的薄膜电阻率有大幅度的降低,达到0.22Ω·cm,透光率大于80%.Transparent conducting Al-doped ZnO（AZO） thin films were prepared on common glass substrates by sol-gel spin coating method. The effect of annealing temperature and cooling rate on the structural, electrical and optical properties of AZO thin films were investigated by XRD, SEM, four-point probe method and UV-VIS spectrophotometer respectively. The films showed a hexagonal wurtzite structure and high preferential c-axis orientation. The annealing temperature and cooling rate were effective on the electrical and optical property of AZO thin films. The lowest resistivity of 0.22 Ω. cm and the high transmittance of over 80% were obtained when AZO thin film was annealed at 500℃ for I h and then cooled at -15℃.

关 键 词：ZNO:AL 溶胶-凝胶 热处理 冷却速度 

分 类 号：O484.4[理学—固体物理] TB43[理学—物理]