纳秒和亚纳秒级固态器件高压脉冲源的研制  

Development of a Nano and Sub-nanosecond Solid State Device High Voltage Pulser

作　　者：刘春平 龚向东 黄虹宾 李景镇 

机构地区：[1]深圳市微纳光子信息技术重点实验室,广东深圳518060

出　　处：《电讯技术》2009年第8期6-8,共3页Telecommunication Engineering

基　　金：国家自然科学基金资助项目(60477042);深圳市科技局资助项目(200708)

摘　　要：固态器件能产生纳秒甚至亚纳秒级的开关时间,利用固态器件制成的高压脉冲源,广泛应用于激光脉冲开关、探地雷达、高速相机等低功率场合。在各种固态器件中,雪崩三极管最为常用。给出了雪崩三极管在几种典型的电路条件下的雪崩特性曲线,分析了雪崩过程中工作点的移动和电路的动态过程。分别对2N5551和ZTX415两种管子进行了实验,实验电路采用15只雪崩三极管串接,获得了幅度4000V、前沿时间小于5ns的脉冲输出。实验结果表明,两种管子在开关速度和输出电压上相当,但ZTX415性能更加稳定,可靠性更好。Nano and sub- nanosecond level switching time can be got by solid state devices. The high voltage pulser is applied in many fields, such as Pockel cell, wide band radar, high speed camera etc. Avalanche transistor is the most useful in all kinds of solid state devices in low power applications. Avalanche characteristic curves in some circuit conditions are presented. The movement of working points and the dynamic process of the whole circuit system are analyzed. Experiments are performed based on two kinds of avalanche transistors,2N5551 and ZTX415. A pulse of amplitude 4000V and rise edge time less than 5ns is obtained. The experimental results show that the switching time and output voltage of the two transistors are similar, but the latter is more stable and reliable.

关 键 词：固态器件 雪崩三极管 雪崩特性曲线 高压脉冲 

分 类 号：TN924[电子电信—通信与信息系统] TN972[电子电信—信息与通信工程]