低温生长SiO_2钝化膜在太阳电池上的应用  

SIO_2 PASSIVATION FILM GROWN AT LOW TEMPERATURE AND ITS APPLICATION TO THE SOLAR CELL

作　　者：胡宇[1] 孟凡英[1] 董经兵 江民林[1] 余跃波[1] 杨乐[1] 王栩生 王景霄 崔容强[1] 

机构地区：[1]上海交通大学物理系太阳能研究所,上海200240 [2]江苏林洋新能源有限公司工程技术中心,江苏226263

出　　处：《太阳能学报》2009年第8期1073-1077,共5页Acta Energiae Solaris Sinica

摘　　要：主要研究在晶体硅衬底上采用干氧氧化法生长SiO_2薄膜,通过改变非晶SiO_2薄膜的生长温度、时间以及气体流量等参数优化工艺条件,增强对硅片的钝化作用,提高光生少数载流子寿命。实验发现在840℃长的非晶SiO_2薄膜对硅片钝化效果最佳,可将硅片少子寿命提高约90%。此外,为优化SiO_2/SiN_x双层膜的减反射作用,采用Matlab程序计算SiO_2/SiN_x双层膜的反射谱,从理论上获得最优的膜系组合。实验发现生长有SiO_2钝化膜的SiO_2/SiN_x双层膜太阳电池相对单层SiN_x膜太阳电池,短路电流和开路电压分别提高了0.2A和8mV,转换效率提高约9%。The SiO2 film grown on crystalline silicon substrate via dry-oxygen oxidation was mainly investigated in this pa- per. To improve the passivation quality and increase the photo-generated minority carrier lifetime, the technological pa- rameters were optimized by changing the growing.temperature, time and gas-flow rate of the a-Si02 film growth. The re- sults show that the a-SiO2 film grown under the condition of 840℃ can achieve the best passivation quality for silicon wafer, and the lifetime of the silicon wafer increases by 90%. Meanwhile, in order to optimize the antireflection effect of the double-layer film, reflection spectra of the SiNx/Si02 double-layer film was calculated by Matlab program and the op- timal parameters of the film series were obtained theoretically. Compared to the solar cells with single-layer SiNx, the Isc and the Voc of the solar cells with optimized SiNx/SiO2 increased 0.2A and 8mV, respectively and the conversion effi- ciency increased by 9 % relatively.

关 键 词：干氧氧化 钝化 双层膜 太阳电池 

分 类 号：TK513[动力工程及工程热物理—热能工程]