双钙钛矿氧化物锶铁钼氧薄膜异质结电容性质的研究  

Study on the Capacitance Characteristics of Double Perovskite Oxides Sr_2FeMoO_6 Film Heterojunction

作　　者：陈立立[1] 张孝青[2] 朱明[1] 王伟[1] 

机构地区：[1]东南大学物理系,江苏南京211189 [2]苏州大学物理系,江苏苏州215006

出　　处：《化工时刊》2009年第8期20-23,共4页Chemical Industry Times

基　　金：江苏省自然科学基金(BK2004078)

摘　　要：通过溶胶-凝胶方法在S i单晶片上制备了定向生长的双钙钛矿结构的巨磁电阻薄膜Sr2FeMoO6(SFMO)。X射线衍射结果表明,该SFMO薄膜在硅单晶片上成相情况较好,薄膜为多晶结构,晶格常数a 78.916 nm、b75.995 nm、c 103.686 nm。利用HP4284 A型LCR测试仪测量了S i衬底上定向生长的Sr2FeMoO6薄膜样品的电容特性,并对比了试验结果与理论推导。Using Sol -Gel method, the epitaxial double perovskite （SFMO） thin film was prepared on the Si wafer. The X - ray diffraction technique was used to analyze microstructure of SFMO film. The results shows that SFMO film was well structured. The film that was on the surface of the Si suhstrate was multicrystal. The lattice constants of SFMO film were a =78. 916 nm,b =75. 995 nm and c = 103. 686 nm. In this paper, HP4284 A -type LCR testing equipment was used to measure the capacitance characteristics of the thin - film sample, which is the epitaxial double perovskite （SFMO） deposited onto the surface of Si substate. And comparison between experiment and theory was made.

关 键 词：溶胶-凝胶法 异质结 电容特性 

分 类 号：TB383.1[一般工业技术—材料科学与工程]