中性介质中铜缓蚀剂的成膜过程  

Film Formation Process of Corrosion Inhibitors on Copper in Neutral Solutions

作　　者：甘复兴[1] 戴忠旭[1] 汪的华[1] 姚禄安[1] 

机构地区：[1]武汉大学环境科学系,武汉430072

出　　处：《应用化学》1998年第4期45-48,共4页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金;金属腐蚀与防护国家重点实验室基金

摘　　要：使用光电化学与电化学石英晶体微天平联用（PECQCM）技术对中性介质铜缓蚀剂成膜过程进行了现场研究．结果表明，在中性Na2SO4溶液中钝化型缓蚀剂Na2OrO4对Cu成膜生长有抛物线规律，而由于Cl-的影响，在中性NaCl溶液中，该缓蚀剂膜生长曲线为折线型．沉淀型缓蚀剂Na2SiO3在Na2SO4溶液中的铜晶振电极上不成膜，而在NaCl溶液中可成膜．The film formation process of corrosion inhibitors on copper in neutral solutionswas studied by combination of photoelectrochemical technique with electrochemical quartzcrystal microbalance(PECQCM). It is found that the film growth on the copper in Na2SO4solution with oxidizing inhibitor Na2CrO4 follows the parabola type line, while in NaCl solution it appears to be a broken line. The precipitation type inhibitor Na2SiO3 will form film onthe copper electrode in NaCl solution, but not in Na2SO4 solution.

关 键 词：缓蚀剂 成膜过程 铜电极 铜缓蚀剂 PECQCM 

分 类 号：TG174.42[金属学及工艺—金属表面处理]