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作 者:刘立营[1] 王秀峰[1] 程冰[1] 章春香[1]
机构地区:[1]陕西科技大学材料科学与工程学院,西安710021
出 处:《功能材料与器件学报》2009年第4期345-349,共5页Journal of Functional Materials and Devices
基 金:国家自然科学基金(批准号:50372038)
摘 要:为提高SiO2微球的表面电荷密度,通过改进St ber法,引入电解质NaCl合成SiO2微球,并采用垂直沉积法制备出光子晶体。通过Zeta电位粒度仪、带EDS能谱仪的场发射扫描电子显微镜(SEM)和紫外-可见-近红外光谱仪对其电学性能、显微形貌和光学性能进行测试分析。Zeta电位测试结果显示改性SiO2微球的Zeta电位平均提高11.39mV;EDS能谱分析表明微球中含有钠元素;SEM照片表明样品平均粒径为334 nm,平均标准偏差小于5%,所得光子晶体为面心立方密排结构;吸收光谱表明在725nm处具有光子晶体带隙。SiO2 microspheres were prepared by improving the Stober method which added NaCl in solution systems for improving surface charge of the SiO2 microspheres, and then SiO: photonic crystals were fabricated by the vertical deposition method at 40℃ and 60% relative humidity. The electrical properties, micromorphology and optical properties were characterized by Zeta potential instrument, Scanning electron microscope (SEM) with energy dispersive X- Ray spectroscopy and Uv -VisNir spectrophotometer. Zeta potential of the modified SiO2 mierospheres in ethanol solution was averagely heightened 11.39mV ; EDS spectra showed that there was Na element in microspheres; SEM images showed that the average size of modified SiO2 microspheres was 334 nm, and its distribution standard deviation was less than 5% , and the sample of SiO2 photonic crystals was face - centered cubic structure with its ( 111 ) planes parallel to the substrate; Absorption spectra showed that the existence of photonic band gap was at 725 nm.
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