外加磁场对应变RTD电流负阻“平台”的抑制作用  

Suppression of plateau structure in the current negative resistance region by external magnetic field in strained RTD

作　　者：汤乃云[1,2] 

机构地区：[1]上海电力学院电子科学与技术系,200090 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,200083

出　　处：《功能材料与器件学报》2009年第4期365-369,共5页Journal of Functional Materials and Devices

基　　金：上海市教委科研创新项目(项目编号:08LZ142)

摘　　要：本文在实验上观察到GaAs/AlAs/InGaAs应变共振隧穿二极管(RTD)在电流负阻区出现一段"平台"现象,该现象来源于发射极子能级和量子阱子能级之间的相互耦合。在外加磁场的作用下,它们之间的耦合得到抑制,在一定的磁场下,负阻"平台"现象消失。此外,峰值电流随磁场增加而减小,导致峰谷电流比下降,同时峰值电压也发生相应的变化。The plateau structure in current negative resistance region has been experimentally observed in strained GaAs/AlAs/InGaAs resonant tunneling diode （RTD）. This phenomenon arises from the coupling between the subbands of emitter quantum well and main quantum well. Their coupling is suppressed by external perpendicular magnetic field. At a certain magnetic field, the plateau structure disappeared. In addition, peak current, i.e. peak - valley - current ratio decreases with magnetic field and the peak voltage increases correspondingly.

关 键 词：应变RTD 外加磁场 电流特性 

分 类 号：TN304.2[电子电信—物理电子学]