基于PZT的结构安全检测的机电阻抗数学建模  

Model analysis of Piezoelectricity wafer using in Structural Health Monitoring

作　　者：岑恩杰[1] 胡旭东[1] 陈换过[1] 李强[1] 

机构地区：[1]浙江理工大学机械与自动控制学院,杭州310018

出　　处：《浙江理工大学学报（自然科学版）》2009年第5期726-730,742,共6页Journal of Zhejiang Sci-Tech University(Natural Sciences)

基　　金：国家自然科学基金项目(50575210)

摘　　要：运用压电和结构振动理论,提出一个两端无约束单块压电陶瓷(PZT)作为激振传感器的机电(E/M)阻抗数学模型,用来预测阻抗响应。阻抗响应可以通过实验测得。该模型考虑一维结构的振动,通过分析模型,提出阻抗谱是由轴向、横向、厚度方向的模态相互叠加后的振动所激起。最后通过实验结果和模型计算的比较分析此模型的实际应用性。An analytical model based on structural vibration theory and theory of piezoelectricity is developed and used to predict the electromechanical（E/M） impedance response of single free-free PZT active wafer, as it will be measured at the piezoelectric active sensor＇s terminals. The model considers one- dimensional structures vibrations, besides, through analyzing the model, advances that E/M impedance occurr by piling up models vibration of axial, breadth and thickness. At last, calculational curve and experimental curve are compared, in order to adjust and validate correctness of the model.

关 键 词：压电效应 机电阻抗 振动模型 

分 类 号：TP277[自动化与计算机技术—检测技术与自动化装置]