贴合法制造长波长InGaAs/InP-GaAs/AlGaAs APD  

Long Wavelength InGaAs/InP-GaAs/AlGaAs APD Implemented by Wafer Bonding

作　　者：沈力 

机构地区：[1]山西省机械设备成套局,太原030001

出　　处：《半导体技术》2009年第9期864-867,共4页Semiconductor Technology

摘　　要：报道了一种用于长波长新的片直接贴合In0.53Ga0.47As/InP-GaAs/Al0.2Ga0.8As APD的设计和制造。使用MBE技术,在p+InP衬底上生长掺Be的p型InP薄层,在n+GaAs衬底上生长掺Be的p型GaAs薄层,并对此两薄层界面进行片直接贴合。成功地在1.3、1.55μm的波长分别获得约47%和33%的均匀增益外量子效率,雪崩增益M为25的APD。The design and implementation of a novel wafer-bonded Ino.53 Ga0.47 As/InP-GaAs/ Al0.2Gao.sAs avalanche photodiode （APD） was reported for long-wavelength applications. Using the direct wafer bonding technique between p-InP thin layer grown on the p＋ InP substrate and p-GaAs thin layer grown on the n＋ GaAs substrate, an avalanche photodiode was successfully achieved with unity-gain external quantum efficiency of 47 % at 1.3μm and 33 % at 1.55 μm. Avalanche gain M is up to 25.

关 键 词：片直接贴合 长波长 雪崩光电二极管 分子束外延 外量子效率 

分 类 号：TN312.7[电子电信—物理电子学]