一款宽带实时延迟线芯片的设计和实现  

Design and Implementation of a Braodband True-Time Delay Chip

作　　者：方园[1,2] 高学邦[1] 吴洪江[1] 喻梦霞[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]电子科技大学,成都610054

出　　处：《半导体技术》2009年第9期886-889,共4页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助(2009CB320200)

摘　　要：为降低电子系统在宽带运用中波束倾斜效应的影响,开展了相关的技术研究。简要介绍了实时延迟线电路的基本概念,对电路设计流程进行了阐述。最终成功开发出一款具有小尺寸和优异微波性能的GaAs微波单片集成数控实时延迟线电路。其性能指标为:工作频率2～8GHz,插入损耗≤23dB,总延时量为637.5ps,驻波比≤1.5∶1。同时指出,要获得高精度的实时延迟线芯片,正确选择控制器件的连接方式和分析延时网络的寄生效应是必要的。Due to ＂beam-squinting＂ effects which drastically influence the performance of electronic system, the application of time-delay offers an enhanced broadband bandwidth with less ＂beam-squinting＂ effects. The design of the broadband GaAs PHEMT monolithic true-time delay was described. The basic concept and design procedures were also introduced. A GaAs MMIC TTD with small size and excellent microwave performances from 2 to 8 GHz band was successfully developed. Insertion loss is less than 23 dB, overall delay time is 637.5 ps, VSWRs of all states are less than 1.5 ： 1. It is concluded that the device periphery must be selected for the desired bandwidth, while time delay network is decided to achieve the precision of time delay.

关 键 词：宽带 高精度 GAAS微波单片集成电路 实时延迟线 波束倾斜效应 

分 类 号：TN402[电子电信—微电子学与固体电子学]