缓冲层对LBO晶体上1064nm,532nm增透膜附着力的影响  

Influence of buffer layer on adhesion of 1064 nm,532 nm frequency-doubled antireflection coating to LBO crystal

作　　者：谭天亚[1,2] 吴炜[1,2] 郭永新[1,2] 邵建达[3] 范正修[3] 

机构地区：[1]辽宁大学物理学院,沈阳110036 [2]沈阳市光电子功能器件与检测技术重点实验室,沈阳110036 [3]中国科学院上海光学精密机械研究所光学薄膜技术研发中心,上海201800

出　　处：《强激光与粒子束》2009年第9期1343-1346,共4页High Power Laser and Particle Beams

基　　金：沈阳市科技计划项目(1071115-1-00);辽宁省教育厅科研计划项目(2008224);辽宁省科技厅科研计划项目(20081030)

摘　　要：采用电子束蒸发方法在LBO晶体上制备了无缓冲层和具有不同缓冲层的1064 nm,532 nm二倍频增透膜。利用分光光度计、纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力以及抗激光损伤性能进行了测试分析。结果表明:所有样品在1064 nm和532 nm波长的剩余反射率都分别小于0.1%和0.2%;与无缓冲层样品相比,预镀Al2O3缓冲层样品的附着力提高了43.1%,具有SiO2缓冲层样品的附着力显著提高,而MgF2缓冲层的插入却导致薄膜附着力降低。应用全塑性压痕理论和剪切理论对薄膜的附着力增强机制进行了分析。薄膜的抗激光损伤性能分析表明,SiO2缓冲层也有助于改进薄膜的激光损伤阈值。1 064 nm, 532 nm frequency-doubled antireflection coatings with no buffer layer or with different buffer layers were fabricated on LBO crystal using electron beam evaporation technique. The optical property, adhesion and laser-induced damage threshold（LIDT） were investigated. The results showed that the reflectance of all samples was below 0.1% and 0.2% at wavelength of 1 064 nm and 532 nm, respectively. Compared with the sample with no buffer layer, the critical adhesion of the sample with Al2O3 buffer layer of was increased by 43.1% and that of the coating with SiO2 buffer layer of was improved significantly, and the critical adhesion of the coating with MgF2 buffer layer of was decreased. The mechanism of adhesion strengthening of the coating was analyzed by full plastic indentation and shear theory. Meanwhile, it was found that LIDT of the coating with SiO2 buffer layer of was improved.

关 键 词：二倍频增透膜 LBO晶体 附着力 缓冲层 

分 类 号：O484.41[理学—固体物理]