脉冲功率电源辐射电磁场测量与分析  

Measurement and analysis of EMF around pulsed power supplies

作　　者：曹荣刚[1] 邹军[1] 袁建生[1] 

机构地区：[1]清华大学电机工程与应用电子技术系电力系统国家重点实验室,北京100084

出　　处：《强激光与粒子束》2009年第9期1426-1430,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(50677028)

摘　　要：对采用三电极气体间隙放电开关的脉冲功率电源和采用可控硅开关的脉冲功率电源进行了辐射电磁场测量与分析。所研究的脉冲功率电源的脉冲持续时间为ms量级,电流峰值为几十到几百kA。使用多组微分式磁场探头和高采样率、高存储深度的数字示波器进行了磁场测量;通过探头校对实验,对探头系数进行了校验。通过对微分测量结果的校正与积分运算,得到了磁场的时域波形。分析了低频段按照探头系数的计算方法和积分处理方法的关系,总结了时域波形重构的一些方法。得到了两种电源的电磁场特性:三电极气体间隙放电开关产生的磁场频谱范围可达10 MHz,而可控硅开关产生的磁场在1 MHz以内;其辐射电场微弱。The pulse current generated by pulsed power supply could be several hundred thousand amperes, which could produce great interference to the electronic apparatus and other modules of the power supply. Thereby, the measurement of spatial and temporal distributions of radiated electromagnetic fields could be useful. Two supplies with spark gap（SG） switches and silicon controlled rectifier（SCR） switches are focused, and both use capacitors to store energy. Several B-dot probes, D-dot probes and a digital oscilloscope, with enough sampling rate and memory depth, are used to measure the magnetic and electric fields. The result shows that the spectrum of magnetic fields around SG switches can reach 10 MHz, while that around SCR switches is less than 1 MHz. The latter would be better for the system electromagnetic compatibility.

关 键 词：脉冲功率电源 气体间隙开关 可控硅开关 电磁场测量 电磁干扰 

分 类 号：TM8[电气工程—高电压与绝缘技术]