Yb∶YAG晶体的生长与激光性能  

Growth of Yb∶YAG Crystal and Its Laser Performance

作　　者：杨培志[1] 徐军[1] 邓佩珍[1] 乔景文[1] 尹红兵[1] 陈杏达[1] 王四亭[1] 钟鹤裕[1] 马国彬[2] 刘新斌 

机构地区：[1]中国科学院上海光学精密机械研究所 [2]美国密歇根大学

出　　处：《人工晶体学报》1998年第3期229-232,共4页Journal of Synthetic Crystals

基　　金：国家高技术863-416项目;国家自然科学基金

摘　　要：采用中频感应提拉法生长出了掺杂浓度的原子分数高达２０％的Ｙｂ∶ＹＡＧ晶体，探索了合适的晶体生长、退火工艺参数；研究了晶体中的杂质离子和色心；选用ＩｎＧａＡｓ半导体激光泵浦，通过激光腔的设计，研究了晶体的激光性能，获得了１０３０ｎｍ波长３００ｍＷ的脉冲激光输出，斜率效率为３０％。b∶YAG crystals doped with upto 20at% have been grown by the Czochralski method,and the growth parameter and annealing condition was studied as well;The color center and impurities in crystal have been discussed;The laser performance was presented by designing an ideal InGaAs diode laser pumped Yb∶YAG crystal microchip,300mW of 1030nm pulsed laser output power was obtained and a measured slope efficiency of 30% was achieved.

关 键 词：YAG晶体 激光晶体 引上法 晶体生长 掺镱 

分 类 号：O78[理学—晶体学]