MOSFET管并联应用时电流分配不均问题探究  

Research on problem of malddistributed electric current of MOSFET in parallel connection

作　　者：赵秋[1] 曲振江[1] 

机构地区：[1]南京工业职业技术学院电气与自动化系,江苏南京210046

出　　处：《电子设计工程》2009年第9期65-67,共3页Electronic Design Engineering

摘　　要：并联应用时MOSFET管会产生电流分配不匀的现象,为减小此问题造成的不良影响,只能通过实验确定有关的电路参数。这里用数学方法详细分析MOSFET管的特性参数和电路参数对静态和动态漏极电流分配不匀的影响,推导出反映漏极电流分配不匀程度和对漏极电流上升速度影响程度的精确计算公式,为在实际工作中减小电流分配不匀的影响提供理论依据。Parallel used MOSFET exists uneven distribution of the current phenomenon, in order to reduce the harmful influence of uneven distribution, people only can determine the circuit parameters through experiments. The paper analyses the characteristic parameters of MOSFET and effects of circuit parameters on the static and dynamic drain current uneven distribution conditions with math ways in detail, derives precise formula which reflects the extent of malddistributed drain current and effects extent to drain current increasing speed, for reducing the actual work in the current impact of uneven distribution provides a theoretical basis.

关 键 词：功率MOSFET管 并联应用 电流分配 栅阈电压 

分 类 号：TM485[电气工程—电器]