Tunable Direct Writing of FBGs into a Non-Photosensitive Tm-Doped Fiber Core with an fs Laser and Phase Mask  

Tunable Direct Writing of FBGs into a Non-Photosensitive Tm-Doped Fiber Core with an fs Laser and Phase Mask

在线阅读下载全文

作  者:宋成伟 张云军 王扬 鞠有伦 

机构地区:[1]School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 [2]National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001

出  处:《Chinese Physics Letters》2009年第9期143-145,共3页中国物理快报(英文版)

摘  要:Fiber Bragg gratings (FBGs) are successfully written in a non-photosensitive Tin-doped single-mode fiber by a 800 nm fs laser and a 2.7μm period phase mask. The intra-core FBGs are written using the phase mask ±1 order interference, and have a period of 1.35 μm, which responds to the second-order reflective central wavelength at 1946.4nm. Based on the magnification tuning writing technology, the tunable writing technology is also experimentally investigated. The distance between the phase mask and the fiber, between the phase mask and the tuning lens, and the focal length of the tuning lens all have an influence on the tunable characteristics. Four different FBGs tuning reflective central wavelengths located at 1958.7nm, 1970.8nm, 1882.5nm and 1899.7nm are obtained.Fiber Bragg gratings (FBGs) are successfully written in a non-photosensitive Tin-doped single-mode fiber by a 800 nm fs laser and a 2.7μm period phase mask. The intra-core FBGs are written using the phase mask ±1 order interference, and have a period of 1.35 μm, which responds to the second-order reflective central wavelength at 1946.4nm. Based on the magnification tuning writing technology, the tunable writing technology is also experimentally investigated. The distance between the phase mask and the fiber, between the phase mask and the tuning lens, and the focal length of the tuning lens all have an influence on the tunable characteristics. Four different FBGs tuning reflective central wavelengths located at 1958.7nm, 1970.8nm, 1882.5nm and 1899.7nm are obtained.

分 类 号:TN253[电子电信—物理电子学] TN24

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象