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机构地区:[1]同济大学电信学院,上海201804 [2]同济大学半导体研究所,上海201804
出 处:《电子测量与仪器学报》2009年第8期20-26,共7页Journal of Electronic Measurement and Instrumentation
基 金:国家863计划(编号:2006AA05Z211)资助项目
摘 要:利用CMOS工艺下衬底型双极晶体管的温度特性,设计了一种精度较高的温度传感器。斩波技术和动态元件匹配技术的应用很好的提高了温度传感器的精度。文章对斩波和动态元件匹配技术进行了详细的分析。并采用HYNIX0.5μm混合信号工艺进行仿真和流片,仿真结果显示,该温度传感器精度为±0.4℃,工作的温度的范围?40℃~+100℃。多个芯片实测结果表明:温度传感器精度为±0.7℃,功耗0.35mW,芯片面积是889μm×620μm。芯片输出为模拟电压信号,便于后续电路进行采集。该温度传感器已经成功用在消费类电子产品中。A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology. The accuracy of temperature sensor is improved by using of chopping technique and dynamic element matching. The circuit with chopping technology is given, and the chopping technology is carefully analyzed in the paper. The dynamic element matching technology and circuit realization of temperature sensor are also described. The work of simulation and tape out was done with HYNIX 0.5μm mixed signal technology. The simulation results show that the accuracy is +0.4℃, the range of temperature is from 40℃ to +100℃. The measured resuits of several different chips show that the accuracy is within ±0.7℃, the power dissipation is 0.35mW and the chip area is 889μm×620μm. The output signal of the chip is an analog voltage, which is easy to collect. Finally, the paper compares the present sensor to that of previous published work. The temperature sensor is successfully used in consumption kind of electronic productions.
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