(Pb,La)TiO_3铁电薄膜的太赫兹时域光谱实验研究  

Time Domain Terahertz Spectroscopy of(Pb,La)TiO_3 Ferroelectric Thin Films

作　　者：张婷婷[1] 张雅鑫[1] 吴家刚[2] 刘頔威[1] 何洲[1] 刘盛纲[1] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054 [2]四川大学材料科学学院,四川成都610064

出　　处：《光谱学与光谱分析》2009年第9期2342-2345,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(10676110);国家"973"重大基础研究项目(2007CB310401);高等学校博士学科点专项科研基金项目(20050614017)资助

摘　　要：利用THz时域光谱技术（THz-TDS）探测了制作在SiO2／Si衬底上的（Pb，La）TiO3铁电薄膜的频谱响应，获得了三种不同烧结温度的掺镧钛酸铅（PLT）薄膜的THz频谱。根据实验数据计算得到了PLT薄膜在0．2～3THz频段内的吸收系数、折射率和复介电常数，并对比了三种不同烧结温度的PLT薄膜的实验计算结果。实验结果表明，三种PLT薄膜在所测频段内均有较强吸收，且都在1．5THz处有一个明显的吸收峰，在2．25THz处有一个相对较弱的吸收峰。Terahertz time-domain spectroscopic technique was applied to investigate the spectral properties of （Pb, La）TiO3 （PLT） ferroelectric thin films prepared on SiO2/Si substrates. The terahertz spectra of three kinds of PLT thin films with different sintering temperatures were observed. According to the experimental data, the absorption coefficients, refraction indexes and dielecric constants of the PLT thin films were computed, and the experimental results of the three kinds of PLT thin films with different sintering temperatures in the effective frequency range were compared. The results indicated that the PLT thin films had strong absorption in the frequency range of measurement, and had an obvious absorption peak at 1.5 THz and a weaker absorption peak at 2.25 THz.

关 键 词：太赫兹时域光谱 PLT薄膜 烧结温度 吸收谱 折射率 介电常数 

分 类 号：O443.5[理学—电磁学]