星载数字电子设备的辐射加固技术(一)  

Radiation Hardening Techniques for On-Board Digital Electronics

作　　者：潘科炎[1] 王长龙[1] 

机构地区：[1]北京控制工程研究所

出　　处：《航天控制》1998年第3期67-75,共9页Aerospace Control

摘　　要：对国外星载电子设备特别是常用的ＣＭＯＳ器件在空间环境下的抗辐射性能进行大量调研和长期跟踪，在此基础上总结了国外近年来对大规模集成电路辐射失效机理的研究成果，对比了各种器件工艺集成电路的抗辐射性能，重点分析了星载电子系统总剂量辐射损坏、单粒子翻转和单粒子锁定机理，针对这三种由空间辐射引起的星载电子系统失效这一特殊问题，分别介绍了国内外行之有效的辐射加固技术，最后提出了设计星载电子系统的一些建议。On the basis of extensive investigation and long-term track of radiation-tolerant performance of on-board digital system electronics, in particular CMOS devices in common use under the space radiation environments, the report summarizes recent results in the mechanisms of LSIC radiation failure at home and abroad, compares the radiation-tolerant performances of ICs with different technologies, focuses the analysis onto the total ionizing dose damage (TID), the single event upset (SEU) and the single event latchup (SEL) of on-board electronics, and then respectively presents practical radiation hardening techniques at home and abroad in accordance with above three failure modes, finally proposes the recommendation for on-board electronics design.

关 键 词：电子设备 辐射加固 星载 数字式 抗辐射性能 

分 类 号：V443[航空宇航科学与技术—飞行器设计]