A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current  

作　　者：朱阳军 苗庆海 张兴华 韩郑生 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]School of Physics,Shandong University

出　　处：《Journal of Semiconductors》2009年第9期41-44,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (No.60476039);the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences (No.5408SA011001)

摘　　要：It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.

关 键 词：peak junction temperature multi-step current excessive thermotaxis effect of low current power transistor 

分 类 号：TP274[自动化与计算机技术—检测技术与自动化装置]