Active layer self-protection process for organic field-effect transistors  

作　　者：刘舸 刘明 商立伟 涂德钰 刘兴华 王宏 柳江 

机构地区：[1]Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第9期45-48,共4页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(No.2006CB806204);the National Natural Science Foundation of China(Nos.60676001,60676008)

摘　　要：To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.

关 键 词：OFET PENTACENE CUPC STABILITY 

分 类 号：TN386[电子电信—物理电子学] TN321.5